Strained Silicon Heterostructures: Materials and devices
edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray
The Institution of Engineering and Technology, 2001
eISBN: 978-1-84919-167-8 | Cloth: 978-0-85296-778-2
Library of Congress Classification QC611.8.S5S77 2001
Dewey Decimal Classification 621.38152

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

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