This book discusses one possible solution to the key issue in electronics engineering - the approaching limits of CMOS scaling - by taking advantage of the tendency of Schottky contacts to form at channel interfaces in nanoscale devices. Rather than suppressing this phenomenon, a functionality-enhanced device exploits it to increase switching functionality. These devices are Multiple-Independent-Gate-Field-Effect-Transistors, and other related nanoscale devices, whose polarity is electrostatically controllable. The functionality enhancement of these devices increases computational performance (function) per unit area and leads to circuits with better density, performance and energy efficiency.

• Chapter 1: Introduction to functionality-enhanced devices
• Part I: Materials and device research related to functionality-enhanced devices
• Chapter 2: Germanium-based polarity-controllable transistors
• Chapter 3: Two-dimensional materials for functionality-enhanced devices
• Chapter 4: Wse₂ polarity-controllable devices
• Chapter 5: Carrier type control of MX₂ type 2D materials for functionality-enhanced transistors
• Chapter 6: Three-independent gate FET's super steep subthreshold slope
• Chapter 7: Super sensitive terahertz detectors
• Part II: Applications and design techniques of functionality-enhanced devices
• Chapter 8: CNT and SiNW modeling for dual-gate ambipolar logic circuit design
• Chapter 9: Physical design of polarity controllable transistors
• Chapter 10: BCB benchmarking for three-independent-gate field effect transistors
• Chapter 11: Exploratory logic synthesis for multiple independent gate FETs
• Chapter 12: Ultrafine grain FPGAs with polarity controllable transistors
• Chapter 13: Tunnel FET-based security primitive design