Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.

• Chapter 1: Characterizing electrically active defects by transient capacitance spectroscopy
• Chapter 2: Luminescence from point defects in wide-bandgap, direct-gap semiconductors
• Chapter 3: Vibrational spectroscopy
• Chapter 4: Magnetic resonance methods
• Chapter 5: The role of muons in semiconductor research
• Chapter 6: Positron annihilation spectroscopy, experimental and theoretical aspects
• Chapter 7: First principles methods for defects: state-of-the-art and emerging approaches
• Chapter 8: Microscopy of defects in semiconductors
• Chapter 9: Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography
• Chapter 10: Ion-beam modification of semiconductors
• Chapter 11: Characterizing defects with ion beam analysis and channeling techniques