This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits is the first book that deals with a broad spectrum of process and device design, and modelling issues related to various semiconductor devices. This monograph attempts to bridge the gap between device modelling and process design using TCAD. Many simulation examples for different types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are given and compared with experimental data from state-of-the-art devices. Bringing various aspects of silicon heterostructures into one resource, this book also presents a comprehensive perspective of the emerging field and covers topics ranging from materials to fabrication, devices, modelling and applications.