edited by Maria J. Anc
by Katsutoshi Izumi, Peter L.F. Hemment, Atsushi Ogura, Harold J. Hovel and Devendra K. Sadana
The Institution of Engineering and Technology, 2004
Cloth: 978-0-86341-334-6 | Paper: 978-1-84919-063-3 | eISBN: 978-1-84919-064-0
Library of Congress Classification TK7871.85.S5554 2004
Dewey Decimal Classification 621.31937

ABOUT THIS BOOK | TOC
ABOUT THIS BOOK
SIMOX explores Separation-by-IMplanted-OXygen technology, a method of fabricating silicon-on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing.