Process Technology for Silicon Carbide Devices
edited by Carl-Mikael Zetterling
The Institution of Engineering and Technology, 2002
eISBN: 978-1-84919-371-9 | Cloth: 978-0-85296-998-4

ABOUT THIS BOOK | TOC
ABOUT THIS BOOK

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.

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