front cover of Characterisation and Control of Defects in Semiconductors
Characterisation and Control of Defects in Semiconductors
Filip Tuomisto
The Institution of Engineering and Technology, 2020
Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.
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front cover of Characterization of Wide Bandgap Power Semiconductor Devices
Characterization of Wide Bandgap Power Semiconductor Devices
Fei Wang
The Institution of Engineering and Technology, 2018
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
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Distributed Feedback Semiconductor Lasers
John Carroll
The Institution of Engineering and Technology, 1998
Distributed feedback (DFB) semiconductor lasers emit light in a single mode which is essential to providing the carrier in long haul high bit-rate optical communication systems. This comprehensive research monograph provides:
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High Frequency MOSFET Gate Drivers
Technologies and applications
ZhiLiang Zhang
The Institution of Engineering and Technology, 2017
This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.
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A History of the World Semiconductor Industry
P.R. Morris
The Institution of Engineering and Technology, 1990
The book describes the development of semiconductor manufacture on a worldwide basis, from its early beginnings to date. Its approach is wide-ranging, encompassing early experimental work rooted in nineteenth century science, and it includes a brief historical review of the thermionic valve, which played an important part in the genesis of the semiconductor industry. The contents include a description of the establishment and subsequent development of semiconductor manufacture within the various nation states. Although not a technical treatise, major device types and manufacturing processes used in semiconductor fabrication are outlined. Factors affecting the performance of the industry within the major national participants are discussed, and the relationship of the industry to science and technology is also considered.
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Nano-Scaled Semiconductor Devices
Physics, modelling, characterisation, and societal impact
Edmundo A. Gutiérrez-D
The Institution of Engineering and Technology, 2016
The rapid evolution of integrated circuit technology has brought with it many new materials and processing steps at the nano-scale which boost the electrical performance of devices, resulting in faster and more functionally-complex electronics. However, working at this reduced scale can bring second order effects that degrade efficiency and reliability.
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Physics and Technology of Heterojunction Devices
D. Vernon Morgan
The Institution of Engineering and Technology, 1991
Physics and Technology of Heterojunction Devices brings together the physics of engineering aspects of heterojunction semiconductor devices in one volume.
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front cover of Price Measurements and Their Uses
Price Measurements and Their Uses
Edited by Murray F. Foss, Marilyn E. Manser, and Allan H. Young
University of Chicago Press, 1993
In an economy characterized by frequent change in technology, in the types of goods and services purchased, and in the forms of business organization, keeping track of price change continues to pose many difficulties. Price change affects the way we perceive changes in such basic measures as real output, productivity, and living standards. This volume, which brings together academic economists with those responsible for official price indexes, presents outstanding new research on price measurement.

Half of the papers focus on prices for mainframe and personal computers, semiconductors, and other high-tech products, using mainly hedonic techniques. The volume includes a panel discussion by distinguished economists about the theoretical and practical considerations of how best to measure price change of capital goods whose quality is changing rapidly. The authors also present new research on more conventional but still unsettled problems in the price field affecting both the consumer and producer price indexes of the Bureau of Labor Statistics.
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Process Technology for Silicon Carbide Devices
Carl-Mikael Zetterling
The Institution of Engineering and Technology, 2002
Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.
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Silicon Wafer Bonding Technology for VLSI and MEMS Applications
Subramanian S. Iyer
The Institution of Engineering and Technology, 2002
By bonding a thin wafer of active silicon to a thicker wafer via a layer of insulating oxide to form an SOI structure it is possible to substantially improve the performance and integration of microelectronic circuits produced by very large scale integration (VLSI). For example, the recently announced IBM Power 4 'server-ona- chip' integrates two microprocessors, a high bandwidth system switch, a large memory cache and input/output functions. SOI wafer bonding is also an enabling technology in the rapidly growing field of microelectromechanical systems (MEMS).
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Wide Bandgap Semiconductors and their Applications in Power Electronics
Philip A. Mawby
The Institution of Engineering and Technology, 2024
This book covers the progress made in the area of wide bandgap semiconductor (WBG) technologies, in particular SiC, with a strong emphasis on their applications torapidly progressing areas such as automotive, aerospace and the whole electrical energy sector. The book is unique in its blend of device functionality and capabilities, technology road maps, as well as addressing the important aspects of real-life applications of these emerging devices. The benefits offered by wide bandgap material devices is enormous, and in the era of more electrification of transport and reformation of the whole energy supply chain this is set to be one of the key defining technologies over the next few decades that will support the whole eco-structure of society in the 21st century, much as silicon has done over the last half of the 20th century.
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