Characterization of Wide Bandgap Power Semiconductor Devices
The Institution of Engineering and Technology, 2018
Cloth: 978-1-78561-491-0 | eISBN: 978-1-78561-492-7
Library of Congress Classification QC611.8.W53W36 2018
Dewey Decimal Classification 621.38152
Cloth: 978-1-78561-491-0 | eISBN: 978-1-78561-492-7
Library of Congress Classification QC611.8.W53W36 2018
Dewey Decimal Classification 621.38152
ABOUT THIS BOOK | TOC
ABOUT THIS BOOK
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
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