edited by Maria J. Anc by Katsutoshi Izumi, Peter L.F. Hemment, Atsushi Ogura, Harold J. Hovel and Devendra K. Sadana
The Institution of Engineering and Technology, 2004 Cloth: 978-0-86341-334-6 | Paper: 978-1-84919-063-3 | eISBN: 978-1-84919-064-0 Library of Congress Classification TK7871.85.S5554 2004 Dewey Decimal Classification 621.31937
ABOUT THIS BOOK | TOC
ABOUT THIS BOOK
SIMOX explores Separation-by-IMplanted-OXygen technology, a method of fabricating silicon-on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing.
TABLE OF CONTENTS
Chapter 1: Introduction
Chapter 2: Overview of SIMOX technology: historical perspective
Chapter 3: Fundamental processes in SIMOX layer formation: ion implantation and oxide growth
Chapter 4: SIMOX/SOI processes: flexibility based on thermodynamic considerations
Chapter 5: Electrical and optical characterisation of SIMOX substrates
Chapter 6: SIMOX material technology from R&D to advanced products