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SIMOX
edited by Maria J. Anc
by Katsutoshi Izumi, Peter L.F. Hemment, Atsushi Ogura, Harold J. Hovel and Devendra K. Sadana
The Institution of Engineering and Technology, 2004
Cloth: 978-0-86341-334-6 | Paper: 978-1-84919-063-3 | eISBN: 978-1-84919-064-0
Library of Congress Classification TK7871.85.S5554 2004
Dewey Decimal Classification 621.31937

ABOUT THIS BOOK | TOC
ABOUT THIS BOOK

SIMOX explores Separation-by-IMplanted-OXygen technology, a method of fabricating silicon-on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing.

The content includes an historical perspective on the development of SIMOX technology and a discussion of the theoretical background to the underlying formation of SIMOX buried oxide. It also describes the fabrication processes and material characterisation, and covers crucial advancements in evolution of manufacturability from experimental research stage to production-worthy processes proven to support advanced SOI products. In addition to the topics directly pertaining to SIMOX, the book offers wealth of information on ion implantation, thermal processing in extreme conditions, material defects, characterisation techniques, applications and future technology trends.

The book consists of sequence of chapters, each written by a key contributor to the field and represents the first effort to compile broad knowledge of this still evolving technology. It provides the reader with a basic understanding of SIMOX technology and a background for further investigations and applications.

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